Advanced method for measuring ultra-low contact resistivity between silicide and silicon based on cross bridge kelvin resistor

T. Isogai, H. Tanaka, A. Teramoto, T. Goto, S. Sugawa, T. Ohmi

研究成果: Conference contribution

16 被引用数 (Scopus)

抄録

In order to evaluate low contact resistivity precisely, we have developed a new test structure based on cross bridge Kelvin resistor. In this structure, the misalignment margin can be as small as possible. Furthermore, we had successively derived the theoretical expressions to ensure the validity of the newly developed method. This method will enable us to evaluate the silicide to silicon contact resistivity in the sub-10-8 cm2 region.

本文言語English
ホスト出版物のタイトルICMTS 2009 - 2009 IEEE International Conference on Microelectronic Test Structures
ページ109-113
ページ数5
DOI
出版ステータスPublished - 2009
外部発表はい
イベント2009 IEEE International Conference on Microelectronic Test Structures, ICMTS 2009 - Oxnard, CA, United States
継続期間: 2009 3月 302009 4月 2

出版物シリーズ

名前IEEE International Conference on Microelectronic Test Structures

Other

Other2009 IEEE International Conference on Microelectronic Test Structures, ICMTS 2009
国/地域United States
CityOxnard, CA
Period09/3/3009/4/2

ASJC Scopus subject areas

  • 電子工学および電気工学

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