Advanced direct-polish process on organic non-porous ultra low-k fluorocarbon dielectric on Cu interconnects

Xun Gu, Takenao Nemoto, Yugo Tomita, Ricardo Duyos Mateo, Akinobu Teramoto, Shin Ichiro Kuroki, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

A direct-polish process has applied to the ultra low-k dielectric without the etch stop layer to reduce effective dielectric constant in damascene interconnects. In this study, the direct-polish process on organic non-porous dielectric, fluorocarbon (k=2.2), was demonstrated and an optimum direct-polish process condition was investigated. Mechanical effect, not chemical effect, on fluorocarbon degraded electrical properties by changing of chemical structure of fluorocarbon. A surface plasma treatment of fluorocarbon before polishing was applied to avoid the degradation of electrical characteristics during direct-polish and this result revealed that the surface plasma treatment of fluorocarbon is a practical technique in advanced Cu interconnects.

本文言語English
ホスト出版物のタイトルChina Semiconductor Technology International Conference 2011, CSTIC 2011
ページ653-658
ページ数6
1
DOI
出版ステータスPublished - 2011 7 1
イベント10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
継続期間: 2011 3 132011 3 14

出版物シリーズ

名前ECS Transactions
番号1
34
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other10th China Semiconductor Technology International Conference 2011, CSTIC 2011
国/地域China
CityShanghai
Period11/3/1311/3/14

ASJC Scopus subject areas

  • 工学(全般)

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