ADSORPTION OF Te and Hg ON Si(110) AND Ge(110) SURFACES.

H. D. Hagstrum, T. Sakurai

    研究成果: Chapter

    抄録

    Adsorption of Te and coadsorption of Te and Hg on Si(110) and Ge(110) surfaces have been studied using ion-neutralization spectroscopy (INS) and ultraviolet photoemission spectroscopy (UPS) at h nu equals 16. 8 and 21. 2 eV. Monolayer and multilayer adsorption of Te on Si and Ge enable us to differentiate interfacial from bulk electronic structures. Informative differences are observed between the UPS and INS spectra. HgTe has also been produced on these surfaces.

    本文言語English
    ホスト出版物のタイトルUnknown Host Publication Title
    出版社Int Union for Vac Sci, Tech and Appl
    ページ1187-1190
    ページ数4
    2
    出版ステータスPublished - 1977
    イベントProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria
    継続期間: 1977 9 121977 9 16

    Other

    OtherProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
    CityVienna, Austria
    Period77/9/1277/9/16

    ASJC Scopus subject areas

    • 工学(全般)

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