Adsorption of N2H4on silicon surfaces

C. Tindall, L. Li, O. Takaoka, Y. Hasegawa, T. Sakurai

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The chemistry of N2H4 on Si(100)2×1 and Si(111)7×7 has been studied using scanning tunneling microscopy (STM). On Si(100), the STM images show that the predominant pathway for adsorption is across the silicon dimers with the N-N bond parallel to the surface. On Si(111)7×7, the molecule behaves in a manner which is similar to NH 3. That is, at low coverages the molecule adsorbs preferentially at center adatoms due to the greater reactivity of these sites, while at higher coverages it also reacts with the corner adatoms.

本文言語English
ページ(範囲)1155-1158
ページ数4
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
15
3
DOI
出版ステータスPublished - 1997
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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