Activation energy of oxygen vacancy diffusion of yttria-stabilized-zirconia thin film determined from DC current measurements below 150©C

Naoki Wakiya, Naoya Tajiri, Takanori Kiguchi, Nobuyasu Mizutani, Jeffrey S. Cross, Kazuo Shinozaki

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The current density versus time (J-t) characteristics of yttria-stabilized-zirconia (YSZ) films on Si(001) below 150°C were measured. By the application of a negative voltage up to 20 V to the aluminum top electrode, a current peak was observed. The peak evolution was considered on the basis of the space-charge-limited current transient of oxygen vacancy (model-1), and the modulation of electronic conductivity upon oxygen vacancy redistribution (model-2). From the point of view of the activation energy and the relative dielectric constant estimation, model-2 gave a more plausible value. It was also observed, based on J-t measurements, that Nb-doping causes the suppression of oxygen vacancies.

本文言語English
ページ(範囲)L525-L528
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
45
20-23
DOI
出版ステータスPublished - 2006 5月 19
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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