Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers

Kazuhiro Gotoh, Takeya Mochizuki, Tomohiko Hojo, Yuki Shibayama, Yasuyoshi Kurokawa, Eiji Akiyama, Noritaka Usami

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The impact of hydrogen desorption on the electrical properties of TiOx on crystalline silicon (c-Si) with SiOy interlayers is studied for the development of high-performance TiOx carrier-selective contacts. Compared with the TiOx/c-Si heterocontacts, a lower surface recombination velocity of 9.6 cm/s and lower contact resistivity of 7.1 mΩ cm2 are obtained by using SiOy interlayers formed by mixture (often called SC2). The hydrogen desorption peaks arising from silicon dihydride (α1) and silicon monohydride (α2) on the c-Si surface of the as-deposited samples are observed. The α1 peak pressure of as-deposited heterocontacts with SiOx interlayers is lower than that of heterocontacts without a SiOy interlayer. Furthermore, the hydrogen desorption energies are found to be 1.76 and 2.13 eV for the TiOx/c-Si and TiOx/SC2-SiOy/c-Si heterocontacts, respectively. Therefore, the excellent passivation of the TiOx/SC2-SiOy/c-Si heterocontacts is ascribed to the relatively high rupture energy of bonding between Si and H atoms.

本文言語English
ページ(範囲)36-42
ページ数7
ジャーナルCurrent Applied Physics
21
DOI
出版ステータスPublished - 2021 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 物理学および天文学(全般)

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