Achievement of balanced high frequency and high breakdown by InGaAs-based high-electron-mobility transistors with slant field plates

Tomotaka Hosotani, Taiichi Otsuji, Tetsuya Suemitsu

研究成果: Article査読

3 被引用数 (Scopus)

抄録

InGaAs-based high-electron-mobility transistors (HEMTs) with SiCN-based multistep slant field plates (FPs) and two-step recess (TSR) gates are fabricated and characterized. The slant FPs, which were originally developed for GaN-HEMTs, are integrated with InGaAs-HEMTs to increase the breakdown voltage (BV). The BVs of InGaAs-HEMTs increase by a factor of 1.5-2. However, FPs have a negative effect on the current gain cutoff frequency (fT). Consequently, BV and fT have a trade-off relationship. The combination of slant FPs and TSR gates enables the achievement of a balanced BV and fT of 8.0 V and 106 GHz, respectively, in 130-nm-gate-length InGaAs-HEMTs.

本文言語English
論文番号114101
ジャーナルApplied Physics Express
9
11
DOI
出版ステータスPublished - 2016 11

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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