Accurate extraction of conduction parameter in MOSFETs on Si(110) surface

Philippe Gaubert, Akinobu Teramoto, T. Hamada, T. Suwa, T. Ohmi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

This paper reports for the first time the intrinsic mobility attenuation factor for p-channel MOSFETs fabricated on (110) crystallographic oriented silicon. It has been demonstrated that some extraction methods working well for the conventional orientation cannot be applied anymore when it comes to the (110) orientation. The intrinsic attenuation factor found for the new orientation is ten times smaller than for the conventional one. Then the channel mobility of Si(110) p-MOSFETs is much less sensitive to the effective electric field variations than the Si(100) p-MOSFETs meaning that the shift to higher effective electric field coming from a higher doping concentration in the channel will affect in much less proportion the hole mobility of p-MOSFETs based on (110) oriented silicon.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
ページ1393-1394
ページ数2
DOI
出版ステータスPublished - 2007 12月 1
イベント28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
継続期間: 2006 7月 242006 7月 28

出版物シリーズ

名前AIP Conference Proceedings
893
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
国/地域Austria
CityVienna
Period06/7/2406/7/28

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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