@inproceedings{8e12628f41de43b18e4d89c144fddab9,
title = "Accurate extraction of conduction parameter in MOSFETs on Si(110) surface",
abstract = "This paper reports for the first time the intrinsic mobility attenuation factor for p-channel MOSFETs fabricated on (110) crystallographic oriented silicon. It has been demonstrated that some extraction methods working well for the conventional orientation cannot be applied anymore when it comes to the (110) orientation. The intrinsic attenuation factor found for the new orientation is ten times smaller than for the conventional one. Then the channel mobility of Si(110) p-MOSFETs is much less sensitive to the effective electric field variations than the Si(100) p-MOSFETs meaning that the shift to higher effective electric field coming from a higher doping concentration in the channel will affect in much less proportion the hole mobility of p-MOSFETs based on (110) oriented silicon.",
keywords = "MOS transistor, Mobility, Mobility attenuation factor, Silicon, Surface orientation",
author = "Philippe Gaubert and Akinobu Teramoto and T. Hamada and T. Suwa and T. Ohmi",
year = "2007",
month = dec,
day = "1",
doi = "10.1063/1.2730424",
language = "English",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "1393--1394",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}