Accurate determination of SiO2 film thickness by x-ray photoelectron spectroscopy

K. Takahashi, H. Nohira, K. Hirose, T. Hattori

    研究成果: Article査読

    38 被引用数 (Scopus)

    抄録

    The SiO2 film thickness was determined using x-ray photoelectron spectroscopy. Monte Carlo simulation was used to determine the elastic and inelastic scattering of Si2p photoelectrons in silicon oxide. It was found that elastic scattering of Si2p photoelectrons in silicon oxide could be effectively neglected in several specific directions.

    本文言語English
    ページ(範囲)3422-3424
    ページ数3
    ジャーナルApplied Physics Letters
    83
    16
    DOI
    出版ステータスPublished - 2003 10 20

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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