抄録
We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm (VG= - 15 V) and 5 nm (VG=15 V), respectively.
本文言語 | English |
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ページ(範囲) | L1408-L1410 |
ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
巻 | 42 |
号 | 12 A |
DOI | |
出版ステータス | Published - 2003 12月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(その他)
- 物理学および天文学(全般)