Accumulation and depletion layer thicknesses in organic field effect transistors

Manabu Kiguchi, Manabu Nakayama, Kohei Fujiwara, Keiji Ueno, Toshihiro Shimada, Koichiro Saiki

研究成果: Letter査読

104 被引用数 (Scopus)

抄録

We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm (VG= - 15 V) and 5 nm (VG=15 V), respectively.

本文言語English
ページ(範囲)L1408-L1410
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
12 A
DOI
出版ステータスPublished - 2003 12月 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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