Ac susceptibility of (Ga,Mn)As probed by the anomalous Hall effect

Y. Nishitani, D. Chiba, F. Matsukura, H. Ohno

研究成果: Article査読

抄録

ac susceptibility of a ferromagnetic semiconductor (Ga,Mn)As was measured using microscaled Hall bar through the anomalous Hall effect. The synchronous component of the Hall resistance with applied ac magnetic field (∼1 mT) was detected using a lock-in technique. The temperature dependence of the ac Hall resistance shows a clear peak in the vicinity of the Curie temperature TC, when an offset dc field, whose magnitude is comparable to that of the ac field, is superimposed. We applied this method to detect the change of TC as a function of hole concentration by applying electric fields.

本文言語English
論文番号07C516
ジャーナルJournal of Applied Physics
105
7
DOI
出版ステータスPublished - 2009

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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