We performed a systematic study of the ac magnetic-susceptibility on a Nb3Sn single crystal which displays a strong peak effect near the upper critical field Hc2. In external magnetic fields above μ0H ≈ 3 T, the peak effect manifests itself in a single, distinct peak in the real part X′(T) of the ac susceptibility as a function of temperature T, the size of which continuously increases with increasing magnetic field H. In the imaginary part X″(T) of the ac susceptibility, on the other hand, a single peak initially grows with increasing H up to a well-defined value, and then splits into two sharp peaks which separate when H is further increased. We explain this surprising behavior by a flux-creep model and taking into account the enhancement of the critical-current density in the peak-effect region near Tc in which Bean's critical-state model seems to apply. Outside this region, the crystal is clearly in a flux-creep regime with finite creep exponent n.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering