The absolute coverage of K on the Si(111)-3×1-K surface which was prepared by deposition of K on the 420 °C Si substrate was determined, by using coaxial impact-collision ion scattering spectroscopy, to be 0.29±0.03 ML. This result rules out the possibility that the 3×1-K phase is formed by K impurity stabilization claimed by several groups. Another important implication of this result is that K atoms of the 3×1 overlayer are not imaged bright in the STM.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1993 1月 1|
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