TY - JOUR
T1 - Absolute coverage of K on the Si(111)-3×1-K surface
AU - Hashizume, Tomihiro
AU - Katayama, Mitsuhiro
AU - Jeon, Dong Ryul
AU - Aono, Masakazu
AU - Sakurai, Toshio
PY - 1993/1/1
Y1 - 1993/1/1
N2 - The absolute coverage of K on the Si(111)-3×1-K surface which was prepared by deposition of K on the 420 °C Si substrate was determined, by using coaxial impact-collision ion scattering spectroscopy, to be 0.29±0.03 ML. This result rules out the possibility that the 3×1-K phase is formed by K impurity stabilization claimed by several groups. Another important implication of this result is that K atoms of the 3×1 overlayer are not imaged bright in the STM.
AB - The absolute coverage of K on the Si(111)-3×1-K surface which was prepared by deposition of K on the 420 °C Si substrate was determined, by using coaxial impact-collision ion scattering spectroscopy, to be 0.29±0.03 ML. This result rules out the possibility that the 3×1-K phase is formed by K impurity stabilization claimed by several groups. Another important implication of this result is that K atoms of the 3×1 overlayer are not imaged bright in the STM.
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U2 - 10.1143/jjap.32.l1263
DO - 10.1143/jjap.32.l1263
M3 - Article
AN - SCOPUS:0027663230
VL - 32
SP - L1263-L1265
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 A
ER -