Absolute coverage of K on the Si(111)-3×1-K surface

Tomihiro Hashizume, Mitsuhiro Katayama, Dong Ryul Jeon, Masakazu Aono, Toshio Sakurai

研究成果: Article査読

50 被引用数 (Scopus)

抄録

The absolute coverage of K on the Si(111)-3×1-K surface which was prepared by deposition of K on the 420 °C Si substrate was determined, by using coaxial impact-collision ion scattering spectroscopy, to be 0.29±0.03 ML. This result rules out the possibility that the 3×1-K phase is formed by K impurity stabilization claimed by several groups. Another important implication of this result is that K atoms of the 3×1 overlayer are not imaged bright in the STM.

本文言語English
ページ(範囲)L1263-L1265
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
32
9 A
DOI
出版ステータスPublished - 1993 1月 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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