Absence of growth sequence dependence of AlAs/GaAs heterojunction band discontinuity determined by x-ray photoelectron spectroscopy

H. Ohnoc, H. Ishii, K. Matsuzaki, H. Hasegawa

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Systematic in situ XPS measurements on molecular beam epitaxially grown AlAs/GaAs (AlAs grown on GaAs) and reversed GaAs/AlAs heterojunctions have revealed that the growth sequence dependence of the heterojunction valence band discontinuity ΔEv is a measurement artifact. This artifact arises from the strong surface band bending caused by the heavy doping. By reduction of doping, thereby reducing the effect of band bending, commutativity (i.e. no growth sequence dependence) of ΔEv in the GaAs-AlAs system is shown to be satisfied within the experimental error.

本文言語English
ページ(範囲)367-370
ページ数4
ジャーナルJournal of Crystal Growth
95
1-4
DOI
出版ステータスPublished - 1989 2 2
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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