Above room-temperature operation of InAsAlGaSb superlattice quantum cascade lasers emitting at 12 μm

K. Ohtani, Y. Moriyasu, H. Ohnishi, H. Ohno

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The authors report on above-room-temperature operation of InAsAlGaSb quantum cascade lasers emitting at 12 μm. The laser structures are grown on a n-InAs (100) substrate using solid-source molecular beam epitaxy. An InAsAlGaSb superlattice is used as an active part and an InAs double plasmon waveguide is used for optical confinement. Results show that increased doping concentration in the injection part of the active region expands the current operation range of the devices, allowing laser operation at and above room temperature. The observed threshold current density is 4.0 kA cm2 at 300 K; the maximum operation temperature is 340 K.

本文言語English
論文番号261112
ジャーナルApplied Physics Letters
90
26
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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