Ab initio study of donor-hydrogen complexes for low-resistivity n-type diamond semiconductor

Takeshi Nishimatsu, Hiroshi Katayama-Yoshida, Nozomi Orita

研究成果: Article査読

34 被引用数 (Scopus)

抄録

We performed local density approximation (LDA)-based ab initio calculations for isolated substitutional donor impurities (phosphorus single donor and sulfur double donor), hydrogen at various sites, and hydrogen-related complexes (phosphorus-hydrogen and sulfur-hydrogen) in diamond. Their stable atomic configurations and electronic structures were determined. The two donor impurities exhibit Jahn-Teller distortions, reducing their symmetries from Td to C3v. We found that the bond center site is the most stable site for hydrogen (and muonium) in diamond, and the tetrahedral interstitial site, the hexagonal interstitial site, and the antibonding site are metastable sites. This result is consistent with those of muon-spin-rotation (μSR) experiments. We also found that hydrogen passivates phosphorus donor. We propose a bonding model for the sulfur-hydrogen complex which produces a shallower single-donor level (1.07 eV below the bottom of the conduction band) than the isolated sulfur double-donor (1.63 eV). Frequencies of infrared active hydrogen vibration which will be observed by infrared absorption measurements and the cohesive energy of each complex was predicted. Finally, we propose a new doping method for the fabrication of low-resistivity n-type diamond.

本文言語English
ページ(範囲)1952-1962
ページ数11
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
4
DOI
出版ステータスPublished - 2002 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Ab initio study of donor-hydrogen complexes for low-resistivity n-type diamond semiconductor」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル