Ab initio calculation of F atom desorption in tungsten chemical vapor deposition process using WF6 and H2

Kazuhito Nishitani, Shigeyuki Takagi, Masaaki Kanoh, Toshiyuki Yokosuka, Katsumi Sasata, Tomonori Kusagaya, Seiichi Takami, Momoji Kubo, Akira Miyamoto

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Chemical vapor deposition (CVD) of tungsten is widely used in semiconductor devices. In this process, although many atoms are expected to adsorb on a surface during the deposition, the behavior of these atoms has not been understood well. In this study, we have first investigated the reduction step of F adsorbates by H adsorbates on a W surface by density functional theory. The calculated reaction heat (36.5 kcal/mol) is in good agreement with the experimentally estimated value.

本文言語English
ページ(範囲)5751-5752
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
9 A
DOI
出版ステータスPublished - 2003 9月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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