Chemical vapor deposition (CVD) of tungsten is widely used in semiconductor devices. In this process, although many atoms are expected to adsorb on a surface during the deposition, the behavior of these atoms has not been understood well. In this study, we have first investigated the reduction step of F adsorbates by H adsorbates on a W surface by density functional theory. The calculated reaction heat (36.5 kcal/mol) is in good agreement with the experimentally estimated value.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2003 9月|
ASJC Scopus subject areas