TY - GEN
T1 - A very wide spectrum superluminescent diode at 1.3 μm
AU - Mikami, Osamu
AU - Noguchi, Yoshio
AU - Yasaka, Hiroshi
PY - 1991/12/1
Y1 - 1991/12/1
N2 - An approach that broadens the emission spectral width of superluminescent diodes (SLDs) is proposed. The fabrication of 1.3-μm InGaAsP/InP SLDs incorporating a structure of tandem active layers is described. For this device, the spectral width is broadened over 100 nm, achieving a short coherence length of 9.2 μm, one-fourth that of conventional 1.3-μm SLDs.
AB - An approach that broadens the emission spectral width of superluminescent diodes (SLDs) is proposed. The fabrication of 1.3-μm InGaAsP/InP SLDs incorporating a structure of tandem active layers is described. For this device, the spectral width is broadened over 100 nm, achieving a short coherence length of 9.2 μm, one-fourth that of conventional 1.3-μm SLDs.
UR - http://www.scopus.com/inward/record.url?scp=0026405838&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026405838&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0026405838
SN - 0879426268
T3 - Third Int Conf Indium Phosphide Relat Mater
SP - 212
EP - 215
BT - Third Int Conf Indium Phosphide Relat Mater
PB - Publ by IEEE
T2 - Third International Conference on Indium Phosphide and Related Materials
Y2 - 8 April 1991 through 11 April 1991
ER -