A Unified Approach to Submicron DC MOS Transistor Modeling for Low-Voltage ICs

Steve H. Jen, Bing J. Sheu, Yoichi Oshima

研究成果: Article査読

3 被引用数 (Scopus)

抄録

A unified single-equation approach for the MOS transistor drain current modeling for energy-efficient submicron MOS circuits is presented. Instead of three sets of separate equations for the triode, saturation, and weak inversion regions, only a continuous expression which is valid to describe the behavior of drain current and the derivatives in all operation regions can be realized by using a combination of hyperbola, sigmoid, and interpolation methods. The model expression can predict accurate results for the current, output conductance, and transconduclance with continuous and smooth characteristics. The simulation results agree well with experimental data.

本文言語English
ページ(範囲)107-118
ページ数12
ジャーナルAnalog Integrated Circuits and Signal Processing
12
2
DOI
出版ステータスPublished - 1997

ASJC Scopus subject areas

  • Signal Processing
  • Hardware and Architecture
  • Surfaces, Coatings and Films

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