A test structure for statistical evaluation of pn junction leakage current based on CMOS image sensor technology

Kenichi Abe, Takafumi Fujisawa, Hiroyoshi Suzuki, Shunichi Watabe, Rihito Kuroda, Shigetoshi Sugawa, Akinobu Teramoto, Tadahiro Ohmi

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

We propose a test structure to enable us to evaluate statistical distributions of small pn junction leakage currents of numerous samples in a very short time (0.1 - 10 fA, 28,672 n+/p diodes in 0.77s). This test structure is based on a CMOS active pixel image sensor, which contains a current-to-voltage conversion function by a capacitor and amplifiers of voltage signals in each pixel. The test structure can be designed easily because of a small number of mask layer requirements (at least one metal layer). Its simplicity has considerable benefits such as an easy fabrication for various processes without exceptional cares and also produces usefulness of statistical evaluation for anomalous pn junction leakage phenomena such as extremely large currents or dynamic and quantum fluctuations which show more and more as the device dimension shrinks.

本文言語English
ホスト出版物のタイトル2010 International Conference on Microelectronic Test Structures, 23rd IEEE ICMTS Conference Proceedings
ページ18-22
ページ数5
DOI
出版ステータスPublished - 2010
イベント2010 International Conference on Microelectronic Test Structures, ICMTS 2010 - Hiroshima, Japan
継続期間: 2010 3 222010 3 25

出版物シリーズ

名前IEEE International Conference on Microelectronic Test Structures

Other

Other2010 International Conference on Microelectronic Test Structures, ICMTS 2010
国/地域Japan
CityHiroshima
Period10/3/2210/3/25

ASJC Scopus subject areas

  • 電子工学および電気工学

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