A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s

Y. Kumagai, T. Inatsuka, R. Kuroda, A. Teramoto, T. Suwa, S. Sugawa, T. Ohmi

研究成果: Conference contribution

3 引用 (Scopus)

抜粋

We propose a test circuit which can evaluate statistical characteristics of gate leakage current in a very short time with high accuracy (10 17 - 10 17 A, 87344 samples in 80 s). The absolute value of the gate leakage current is verified and the repeatability error is 110 18 A. Using the test circuit, random telegraph signal of the gate leakage current and stress induced leakage current are evaluated statistically.

元の言語English
ホスト出版物のタイトルICMTS 2012 - 2012 IEEE International Conference on Microelectronic Test Structures
ページ131-136
ページ数6
DOI
出版物ステータスPublished - 2012 5 24
イベント2012 IEEE International Conference on Microelectronic Test Structures, ICMTS 2012 - San Diego, CA, United States
継続期間: 2012 3 202012 3 22

出版物シリーズ

名前IEEE International Conference on Microelectronic Test Structures

Other

Other2012 IEEE International Conference on Microelectronic Test Structures, ICMTS 2012
United States
San Diego, CA
期間12/3/2012/3/22

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Kumagai, Y., Inatsuka, T., Kuroda, R., Teramoto, A., Suwa, T., Sugawa, S., & Ohmi, T. (2012). A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s. : ICMTS 2012 - 2012 IEEE International Conference on Microelectronic Test Structures (pp. 131-136). [6190631] (IEEE International Conference on Microelectronic Test Structures). https://doi.org/10.1109/ICMTS.2012.6190631