A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s

Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10-17 A±10\% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current.

本文言語English
論文番号6512020
ページ(範囲)288-295
ページ数8
ジャーナルIEEE Transactions on Semiconductor Manufacturing
26
3
DOI
出版ステータスPublished - 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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