A Ta/Mo interdiffusion dual metal gate technology for drivability enhancement of FinFETs

Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi O'uchi, Yuki Ishikawa, Hiromi Yamauchi, Junichi Tsukada, Kenichi Ishii, Meishoku Masahara, Kunihiro Sakamoto, Eiichi Suzuki

研究成果: Article査読

8 被引用数 (Scopus)

抄録

A Ta/Mo interdiffusion dual metal gate technology was successfully introduced to FinFET fabrication. The advantage of the proposed technology was examined by using the gate-first process without a metal-etch off step. The Ta/Mo gated nMOS FinFET with a reduced threshold voltage (Vth) and the Mo gated pMOS FinFET exhibited symmetrical values of (Vth) (0.31/-0.36 V), which are desirable for the FinFET CMOS circuit operation with enhanced current drivability. It was also confirmed that the Ta/Mo interdiffusion process causes no degradation in the carrier mobility.

本文言語English
ページ(範囲)618-620
ページ数3
ジャーナルIEEE Electron Device Letters
29
6
DOI
出版ステータスPublished - 2008 6
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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