A surrounding isolation-merged plate electrode (SIMPLE) cell with checkered layout for 256 Mbit DRAMs and beyond

T. Ozaki, A. Nitayama, K. Sunouchi, H. Takato, S. Takedai, A. Yagishita, K. Hieda, F. Horiguchi

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The authors describe a novel cell structure called a surrounding isolation merged plate electrode (SIMPLE) cell. In this cell, close-packed silicon pillars are laid out checker-wise, and a thin isolation-merged plate electrode surrounds the pillars. This cell structure leads to cell area reduction to 50%, trench depth reduction to 50%, and planarization and process step reduction compared with the conventional trench type cell. Using the design rule of 64 Mbit DRAM (dynamic RAM) (0.35 μ m), the SIMPLE cell can achieve a cell area of 256 Mbit DRAM (0.5 μ m2). The SIMPLE cell is an attractive candidate for 256 Mbit DRAMs and beyond.

本文言語English
ホスト出版物のタイトルInternational Electron Devices Meeting 1991, IEDM 1991
出版社Institute of Electrical and Electronics Engineers Inc.
ページ469-472
ページ数4
ISBN(電子版)0780302435
DOI
出版ステータスPublished - 1991 1 1
イベントInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
継続期間: 1991 12 81991 12 11

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
1991-January
ISSN(印刷版)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period91/12/891/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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