A sub-ns three-terminal spin-orbit torque induced switching device

Shunsuke Fukami, Tetsuro Anekawa, Ayato Ohkawara, Chaoliang Zhang, Hideo Ohno

研究成果: Conference contribution

15 被引用数 (Scopus)

抄録

We show a three-terminal spintronics memory device, which can be reliably switched by 0.5-ns current pulses with small magnitude. A new device geometry is employed, where spin-orbit torque is used for the write operation. We also show that an improved structure realizes magnetic field-free switching and employing a material other than the standard Ta can lead to a reduction of the switching current by more than half.

本文言語English
ホスト出版物のタイトル2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509006373
DOI
出版ステータスPublished - 2016 9 21
イベント36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States
継続期間: 2016 6 132016 6 16

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
2016-September
ISSN(印刷版)0743-1562

Other

Other36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
国/地域United States
CityHonolulu
Period16/6/1316/6/16

ASJC Scopus subject areas

  • 電子工学および電気工学

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