A study of blister formation in ALD Al2O3 grown on silicon

Bart Vermang, Hans Goverde, Veerle Simons, Ingrid De Wolf, Johan Meersschaut, Shuji Tanaka, Joachim John, Jef Poortmans, Robert Mertens

研究成果: Conference contribution

14 被引用数 (Scopus)

抄録

This work investigates the formation of blisters during annealing an Al2O3 film grown by atomic layer deposition (ALD) on Si. This blistering phenomenon is shown to occur under an external load in the presence of a tensile residual stress: the total membrane stress is a super-imposition of the residual stress of the pre-stressed film and a concomitant stress due to change of blister profile. In the case of this Si/Al2O3 system, the film is indeed pre-stressed and the hydrostatic pressure is caused by (i) the effusion of H2 and H 2O and (ii) Al2O3 being a diffusion barrier. Picture Presented. Schematics of the loading configuration of a pressurized blister, taken from [1].

本文言語English
ホスト出版物のタイトルProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
ページ1135-1138
ページ数4
DOI
出版ステータスPublished - 2012 11 26
イベント38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
継続期間: 2012 6 32012 6 8

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(印刷版)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
国/地域United States
CityAustin, TX
Period12/6/312/6/8

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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