This work investigates the formation of blisters during annealing an Al2O3 film grown by atomic layer deposition (ALD) on Si. This blistering phenomenon is shown to occur under an external load in the presence of a tensile residual stress: the total membrane stress is a super-imposition of the residual stress of the pre-stressed film and a concomitant stress due to change of blister profile. In the case of this Si/Al2O3 system, the film is indeed pre-stressed and the hydrostatic pressure is caused by (i) the effusion of H2 and H 2O and (ii) Al2O3 being a diffusion barrier. Picture Presented. Schematics of the loading configuration of a pressurized blister, taken from .