A spread stacked capacitor (SSC) cell for 64Mbit DRAMs

S. Inoue, K. Hieda, A. Nitayama, F. Horiguchi, F. Masuoka

研究成果: Conference article査読

10 被引用数 (Scopus)


In order to realize a small memory cell area for 64-Mb DRAMs (dynamic RAMs), a spread stacked capacitor (SSC) cell is proposed. In this cell, the storage electrode of the first memory cell is expanded to the neighboring second memory cell area. Then, the storage electrode of the second memory cell is also expanded to the first memory cell area. Therefore, each storage electrode can occupy two memory cell areas, and the SSC cell can enlarge the storage capacitance to 1.8 times that of the conventional stacked capacitor cell. When the SSC cell is applied to 64-Mb DRAMs, a 27-fF storage capacitance can be achieved using a 4-nm-SiO2-equivalent-thickness dielectric film.

ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1989 12月 1
イベント1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
継続期間: 1989 12月 31989 12月 6

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学


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