A simple test structure for evaluating the variability in key characteristics of a large number of MOSFETs

Shunichi Watabe, Akinobu Teramoto, Kenichi Abe, Takafumi Fujisawa, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The increase in the electrical characteristic variability of MOSFETs caused by the miniaturization of MOSFETs is one of the critical issues for realizing the low power consumption of large-scale-integrated circuits and the high accuracy of analog devices. It is necessary to easily evaluate the variability of a very large number of MOSFETs in a very short time for short-period- developing fabrication processes and device structures. We have proposed and developed a simple test structure for evaluating the electrical characteristics of over 1.2 million MOSFETs such as threshold voltage (V th), subthreshold swing (S-factor) in around 30 min. The accuracy of the test circuit developed is 1.9 mV, as 3σ. We have also evaluated the V th distribution, the S-factor distribution, and the dependence of V th variability on the gate size and antenna ratio of MOSFETs. The measurement results are very useful in developing fabrication processes, process equipment, and device structures, that suppress the variability.

本文言語English
論文番号6121913
ページ(範囲)145-154
ページ数10
ジャーナルIEEE Transactions on Semiconductor Manufacturing
25
2
DOI
出版ステータスPublished - 2012

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 産業および生産工学
  • 電子工学および電気工学

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