A SiGe HBT IC chipset for 40-Gb/s optical transmission systems

T. Masuda, N. Shiramizu, E. Ohue, K. Oda, R. Hayami, M. Kondo, T. Onai, K. Washio, K. Ohhata, F. Arakawa, M. Tanabe, H. Shemamoto, T. Harada

研究成果: Article査読


Using a 0.2-μm self-aligned epitaxial-growth silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology, we have developed a chipset for 40-Gb/s time-division multiplexing optical transmission systems. In this paper, we describe seven analog and digital ICs: a 45-GHz bandwidth transimpedance amplifier, a 48.7-GHz bandwidth automatic-gain-controllable amplifier, a 40-Gb/s decision circuit, a 40-Gb/s full-wave rectifier, a 40-Gb/s limiting amplifier with a 32-dB gain, a 45-Gb/s 1:4 demultiplexer, and a 45-Gb/ s 4:1 multiplexer. To increase bandwidth of the transimpedance amplifier, a common-base input stage is introduced. In order to have high gain and wide bandwidth simultaneously, active load circuits composed of a differential transimpedance amplifier are used for the AGC amplifier, the limiting amplifier, and the decision circuit. Full-rate clocking is employed to reduce the influence caused by clock-duty variation in digital circuits such as the decision circuit, the demultiplexer, and the multiplexer. All ICs were characterized by using on-wafer probes, and some of them were built in brass-packages for bit-error rate measurement.

ジャーナルInternational Journal of High Speed Electronics and Systems
出版ステータスPublished - 2003 3月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学


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