A laminated polarization splitter for the wavelength region longer than 1.3 μm is fabricated for the first time. It is composed of a-SiC:H/SiO2 alternative multilayers prepared by plasma-enhanced chemical vapor deposition. Splitting behavior is also verified experimentally. It has low absorption loss even for the wavelength region around λ = 1.3 μm because the band-gap energy of a-Sic is larger than that of a-Si. The measured splitting angle is 13.8°, which is 2.4 times larger than the 5.7° splitting angle of rutile. The absorption loss of the multilayer is reduced to 1 × 10-3 dB/μm at λ = 1.3 μm. The magnitude of the residual stress is 9.45 × 108 dyn/cm2, which is about one-third of that prepared by the rf bias sputtering equipment which is used for another project of our group. The deposition rate of SiO2, is increased to 135 nm/min, which is 27 times larger than that prepared by the sputtering equipment.
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