In a CMOS image sensor featuring a lateral overflow capacitor in a pixel, which integrates the overflowed charges from a fully depleted photodiode during the same exposure, the sensitivity in non-saturated signal and the linearity in saturated overflow signal have been improved by introducing a new pixel circuit and its operation. A 1/3" VGA color CMOS image sensor has fabricated through 0.35 μm 2P3M CMOS process results in a 100 dB dynamic range characteristic, with improved sensitivity and linearity.
|出版ステータス||Published - 2005 12 1|
|イベント||2005 Symposium on VLSI Circuits - Kyoto, Japan|
継続期間: 2005 6 16 → 2005 6 18
|Other||2005 Symposium on VLSI Circuits|
|Period||05/6/16 → 05/6/18|
ASJC Scopus subject areas