A recent progress of spintronics devices for integrated circuit applications

研究成果: Review article査読

27 被引用数 (Scopus)

抄録

Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operation capability in addition to their high-endurance feature. There are three types of spintronics devices with different writing schemes: spin-transfer torque (STT), spin-orbit torque (SOT), and electric field (E-field) effect on magnetic anisotropy. The NV memories using STT have been studied and developed most actively and are about to enter into the market by major semiconductor foundry companies. On the other hand, a development of the NV memories using other writing schemes are now underway. In this review article, first, the recent advancement of the spintronics device using STT and the NV memories using them are reviewed. Next, spintronics devices using the other two writing schemes (SOT and E-field) are briefly reviewed, including issues to be addressed for the NV memories application.

本文言語English
論文番号44
ジャーナルJournal of Low Power Electronics and Applications
8
4
DOI
出版ステータスPublished - 2018

ASJC Scopus subject areas

  • 電子工学および電気工学

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