A proposed atomic-layer-deposition of germanium on Si surface

Satoshi Sugahara, Yasutaka Uchida, Takuya Kitamura, Tomonori Nagai, Motohiro Matsuyama, Takeo Hattori, Masakiyo Matsumura

    研究成果: Article査読

    13 被引用数 (Scopus)

    抄録

    A novel method has been proposed for monolayer deposition of Ge on the clean Si surface. The method is based on alternating and repeated exposures of the surface to germanium tetrachloride and atomic hydrogen. The former results in self-limiting adsorption of precursors on the Si surface, and the latter in extraction of surface-terminating Cl from the precursor-adsorbed Si surface. It has been confirmed experimentally that Ge can be deposited uniformly at one-monolayer thickness on the Si(100) surface using this metod.

    本文言語English
    ページ(範囲)1609-1613
    ページ数5
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    36
    3 SUPPL. B
    DOI
    出版ステータスPublished - 1997 3

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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