A pixel-shared CMOS image sensor using lateral overflow gate

Shin Sakai, Yoshiaki Tashiro, Nana Akahane, Rihito Kuroda, Koichi Mizobuchi, Shigetoshi Sugawa

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

A lateral overflow integration capacitor (LOFIC) based CMOS image sensor sharing two pixels and without row-select transistors has been developed using a newly added lateral overflow gate which directly connects the photodiode and the LOFIC. A 0.18-μm, 2-Poly 3-Metal CMOS technology with a buried pinned photodiode process was employed for the fabrication of the CMOS image sensor having 1/3.3-inch optical format, 1280H × 960V pixels, and RGB Bayer color filter and on-chip micro-lens on each pixel. The fabricated CMOS image sensor exhibits a high conversion gain of 84-μV/e - and a high full well capacity of 6.9 × 104-e - in spite of its pixel size of 3.0 × 3.0-μm2.

本文言語English
ホスト出版物のタイトルESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference
ページ240-243
ページ数4
DOI
出版ステータスPublished - 2009 12 1
イベント35th European Solid-State Circuits Conference, ESSCIRC 2009 - Athens, Greece
継続期間: 2009 9 142009 9 18

出版物シリーズ

名前ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference

Other

Other35th European Solid-State Circuits Conference, ESSCIRC 2009
CountryGreece
CityAthens
Period09/9/1409/9/18

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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