A novel programming method using a reverse polarity pulse in Flash EEPROMs

Hirohisa Iizuka, Tetsuo Endoh, Seiichi Aritome, Riichiro Shirota, Fujio Masuoka

研究成果: Article査読

抄録

The data retention characteristics for Flash EEPROM degrade after a large number of write and erase cycles due to the increase of the tunnel oxide leakage current. This paper proposes a new write/erase method which uses a reverse polarity pulse after each erase pulse. By using this method, the leakage current can be suppressed. As a result, the read disturb time after 105 cycles write/erase operation is more than 10 times longer in comparison with that of the conventional method. Moreover, using this method, the endurance cycle dependence of the threshold voltage after write and erase operation is also drastically improved.

本文言語English
ページ(範囲)832-835
ページ数4
ジャーナルIEICE Transactions on Electronics
E79-C
6
出版ステータスPublished - 1996 1 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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