A novel memory test system with an electromagnet for STT-MRAM testing

R. Tamura, N. Watanabe, H. Koike, H. Sato, S. Ikeda, T. Endoh, S. Sato

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We have successfully developed, for the first time, a new memory test system for STT-MRAM at wafer-level where an electromagnet is combined with a memory test system and a 300 mm wafer prober. In the developed memory test system, an out-of-plane magnetic field up to ±800 mT can be applied on 10x10 mm2 in the 300 mm wafer with distribution of less than 2.5%. We demonstrated that the electromagnet can apply large enough magnetic field to evaluate magnetic immunity properties for STT-MRAM using 2Mb STT-MRAM; magnetic field dependence of pass-bit rate for ″0″/ ″1″ states, read/write shmoo, and ″0″/ ″1″ retention. All the properties can be explained by general theory for STT-MRAM. The developed memory test system with the electromagnet is a key testing tool for STT-MRAMs, which will contribute to increase efficiency of STT-MRAM testing as well as widening the application area of STT-MRAM sensitive to an external magnetic field.

本文言語English
ホスト出版物のタイトルNVMTS 2019 - Non-Volatile Memory Technology Symposium 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728144313
DOI
出版ステータスPublished - 2019 10
イベント19th Non-Volatile Memory Technology Symposium, NVMTS 2019 - Durham, United States
継続期間: 2019 10 282019 10 30

出版物シリーズ

名前NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019

Conference

Conference19th Non-Volatile Memory Technology Symposium, NVMTS 2019
国/地域United States
CityDurham
Period19/10/2819/10/30

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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