@article{5885ac8f55d5467c987b5437b2fbc380,
title = "A nonvolatile memory device with very low power consumption based on the switching of a standard electrode potential",
abstract = "We prepared a nonvolatile memory device that could be reversibly switched between a high and a low open-circuit voltage (Voc) regime. The device is composed of a solid electrolyte Li3PO4 film sandwiched between metal Li and Au electrodes: a Li/Li3PO4/Au heterostructure, which was fabricated at room temperature on a glass substrate. The bistable states at Voc ∼ 0.7 and ∼0.3 V could be reversibly switched by applying an external voltage of 2.0 and 0.18 V, respectively. The formation and deformation of an ultrathin Au-Li alloy at the Li3PO4/Au electrode interface were the origin of the reversible switching.",
author = "Issei Sugiyama and Ryota Shimizu and Tohru Suzuki and Kuniko Yamamoto and Hideyuki Kawasoko and Susumu Shiraki and Taro Hitosugi",
note = "Funding Information: This research was supported by the JST-CREST and the World Premier International Research Center Initiative (WPI Initiative), the Japan Society for the Promotion of Science through its Funding Program for World-Leading Innovation R&D on Science. I.S. acknowledges a Grant-in-Aid for JSPS Fellows (No. 15J06927). T.H. acknowledges KAKENHI (Grant Nos. 26610092, 26246022, 26106502, and 26108702). All of the authors acknowledge Dr. Patrick Han (AIMR, Tohoku University) for checking and correcting English of this manuscript. Publisher Copyright: {\textcopyright} 2017 Author(s).",
year = "2017",
month = apr,
day = "1",
doi = "10.1063/1.4980031",
language = "English",
volume = "5",
journal = "APL Materials",
issn = "2166-532X",
publisher = "American Institute of Physics Publising LLC",
number = "4",
}