A new temporary bonding technology with spin-on glass and hydrogenated amorphous Si for 3D LSIs

H. Hashiguchi, T. Fukushima, H. Kino, K. W. Lee, T. Tanaka, M. Koyanagi

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

A new temporary bonding technology has been demonstrated, where both spin-on glass (SOG) and hydrogenated amorphous silicon (a-Si:H) were used as a bonding layer and as a debonding layer, respectively. Square chips were bonded to a glass wafer through the SOG layer and a-Si:H layer. The SOG bonding was capable of withstanding chip thinning and high-temperature chemical vapor deposition (CVD) processes. A XeCl excimer laser was irradiated to the a-Si:H layer through the glass wafers for debonding the chips. A novel via-last/backside-via 3D integration process using temporary SOG bonding was also proposed for advanced multichip-to-wafer 3D integration with self-assembly.

本文言語English
ホスト出版物のタイトル2014 International Conference on Electronics Packaging, ICEP 2014
出版社IEEE Computer Society
ページ74-77
ページ数4
ISBN(印刷版)9784904090107
DOI
出版ステータスPublished - 2014 1 1
イベント2014 International Conference on Electronics Packaging, ICEP 2014 - Toyama, Japan
継続期間: 2014 4 232014 4 25

出版物シリーズ

名前2014 International Conference on Electronics Packaging, ICEP 2014

Conference

Conference2014 International Conference on Electronics Packaging, ICEP 2014
国/地域Japan
CityToyama
Period14/4/2314/4/25

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

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