A disk-shaped silicon nanostructure, which works as a quantum well, was fabricated by etching a polycrystalline siIicon/SiO2/silicon wafer with a chlorine neutral beam. The diameter (about 8 to 10 nm) and thickness (about 2 to 4 nm) of the nanodisk were controlled by changing the surface-oxide-removal conditions and deposition thickness of poly-silicon. Current-voltage measurements of the nanodisk showed staircase characteristics at room temperature (RT). The staircase width does not depend strongly on nanodisk diameter, but It strongly depends on nanodisk thickness. This result suggests that the nanodisk works as a quantum-well at RT.
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