A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties

Yaguang Guo, Qian Wang, Yoshiyuki Kawazoe, Puru Jena

研究成果: Article

50 引用 (Scopus)

抜粋

Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (∼10 4 cm/V · s) at room temperature and a low mass density (1.71 g/cm 3), making it a promising material for optoelectronic applications.

元の言語English
記事番号14342
ジャーナルScientific reports
5
DOI
出版物ステータスPublished - 2015 9 23

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