A new process approach for slant field plates in GaN-based high-electron-mobility transistors

Tetsuya Suemitsu, Kengo Kobayashi, Shinya Hatakeyama, Nana Yasukawa, Tomohiro Yoshida, Taiichi Otsuji, Daniel Piedra, Tomás Palacios

研究成果: Article査読

7 被引用数 (Scopus)

抄録

A new process approach to realize a slant field plate;a field plate (FP) gradually separated from the semiconductor surface from the gate edge toward the drain;is reported. A multistep SiCN dielectric film is used to make a sloped sidewall in the dielectric film consisting of a slant FP. The sidewall shape is controlled by the number of steps in SiCN. AlGaN/GaN high-electron-mobility transistors (HEMTs) with slant and conventional FPs are prepared using this technique. The advantage of slant FPs over conventional FPs is experimentally confirmed as a result of reduced current collapse, higher current gain cutoff frequency, and higher off-state breakdown voltage.

本文言語English
論文番号01AD02
ジャーナルJapanese journal of applied physics
55
1
DOI
出版ステータスPublished - 2016 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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