A new method to characterize dopant profiles in NMOSFETs using conventional transmission electron microscopy

Kazuo Kawamura, Kazuto Ikeda, Masami Terauchi

    研究成果: Article査読

    抄録

    We have developed a new method using conventional transmission electron microscopy (TEM) to obtain two dimensional dopant profiles in silicon and applied it to 40 nm-gate-length N + /p metal oxide semiconductor field effect transistors (MOSFETs). The results are consistent with those of selective-chemically etched samples observed by TEM. This method, using focused ion beam (FIB) sample preparation and conventional TEM, has the great advantage of simple sample preparation and high spatial resolution compared to other characterization methods, such as atomic capacitance microscopy, spreading resistance microscopy, and TEM combined with selective chemical etching. This indicates that this method can be applicable to the analysis of FETs at the 65 nm or smaller node.

    本文言語English
    ページ(範囲)617-622
    ページ数6
    ジャーナルApplied Surface Science
    237
    1-4
    DOI
    出版ステータスPublished - 2004 10月 15

    ASJC Scopus subject areas

    • 化学 (全般)
    • 凝縮系物理学
    • 物理学および天文学(全般)
    • 表面および界面
    • 表面、皮膜および薄膜

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