A new metallic complex reaction etching for transition metals by a low-temperature neutral beam process

Xun Gu, Yoshiyuki Kikuchi, Toshihisa Nozawa, Seiji Samukawa

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We investigated a new oxidation reaction at a low temperature (-30°C) as a result of O2 neutral beam bombardment at a low activation energy (<0.025eV), which can efficiently form a thin oxide film of all transition metals, such as tantalum, ruthenium and platinum. Meanwhile, a new neutral beam enhanced chemical etching for the neutral beam oxidized transition metals that uses a new metallic complex reaction process and does not cause chemical or physical damage at low temperatures was also proposed. As a result, a highly anisotropic etching profile without re-deposition on the sidewall could be achieved with just the pure chemical reaction between ethanol and metallic oxide at a low kinetic energy using the neutral beam process.

本文言語English
論文番号322002
ジャーナルJournal of Physics D: Applied Physics
47
32
DOI
出版ステータスPublished - 2014 8 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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