A New LDD Transistor with Inverse-T Gate Structure

Tiao Yuan Huang, William W. Yao, Russel A. Martin, Alan G. Lewis, Mitsumasa Koyanagi, John Y. Chen

研究成果: Article査読

29 被引用数 (Scopus)

抄録

A new submicrometer inverse-T lightly doped drain (ITLDD) transistor structure for alleviating hot-electron effects is demonstrated, A thin extension of the polysilicon gate under the oxide sidewall spacer is formed, giving the gate cross section the appearance of an inverted letter T. Due to the unique self-aligned n-to-gate feature facilitated by the conducting polysilicon extension, the “spacer-induced degradation” existing in a conventional LDD transistor is eliminated in ITLDD devices. This allows the use of low n LDD doses for optimum channel electric field reduction and minimum post-implant drive-in for future VLSI compatibility. Submicrometer ITLDD transistors with good transconductance and hot-electron reliability have been achieved. The new ITLDD transistor offers a promising device structure for future VLSI applications.

本文言語English
ページ(範囲)151-153
ページ数3
ジャーナルIEEE Electron Device Letters
8
4
DOI
出版ステータスPublished - 1987 4

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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