A new insight into the dynamic fluctuation mechanism of stress-induced leakage current

T. Ishida, N. Tega, Y. Mori, H. Miki, T. Mine, H. Kume, K. Torii, M. Muraguchi, Y. Takada, K. Shiraishi, R. Yamada

研究成果: Conference contribution

16 被引用数 (Scopus)

抄録

The dynamic fluctuation of stress-induced leakage current, called V-SILC, which is one of the causes of erratic bits in flash memory, was investigated. The effect of V-SILC on flash memory retention increases with the scaling down of device dimensions because the amplitude of V-SILC is constant and does not depend on the gate area. A statistical analysis of V-SILC indicated that V-SILC is random telegraph noise (RTN) of gate SILC and is associated with the state transition of a single defect in a gate oxide. The state transition of the defect is caused by an electron collision with the defect.

本文言語English
ホスト出版物のタイトル46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
ページ604-609
ページ数6
DOI
出版ステータスPublished - 2008
イベント46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
継続期間: 2008 4月 272008 5月 1

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
ISSN(印刷版)1541-7026

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
国/地域United States
CityPhoenix, AZ
Period08/4/2708/5/1

ASJC Scopus subject areas

  • 工学(全般)

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