A new insight into the dynamic fluctuation mechanism of stress-induced leakage current

T. Ishida; N. Tega; Y. Mori; H. Miki; T. Mine; H. Kume; K. Torii; M. Muraguchi; Y. Takada; K. Shiraishi; R. Yamada

doi:10.1109/RELPHY.2008.4558953

A new insight into the dynamic fluctuation mechanism of stress-induced leakage current

T. Ishida, N. Tega, Y. Mori, H. Miki, T. Mine, H. Kume, K. Torii, M. Muraguchi, Y. Takada, K. Shiraishi, R. Yamada

工学研究科・電気エネルギーシステム専攻

研究成果: Conference contribution

16 被引用数 (Scopus)

抄録

The dynamic fluctuation of stress-induced leakage current, called V-SILC, which is one of the causes of erratic bits in flash memory, was investigated. The effect of V-SILC on flash memory retention increases with the scaling down of device dimensions because the amplitude of V-SILC is constant and does not depend on the gate area. A statistical analysis of V-SILC indicated that V-SILC is random telegraph noise (RTN) of gate SILC and is associated with the state transition of a single defect in a gate oxide. The state transition of the defect is caused by an electron collision with the defect.

本文言語	English
ホスト出版物のタイトル	46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
ページ	604-609
ページ数	6
DOI	https://doi.org/10.1109/RELPHY.2008.4558953
出版ステータス	Published - 2008
イベント	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States 継続期間: 2008 4月 27 → 2008 5月 1

出版物シリーズ

名前	IEEE International Reliability Physics Symposium Proceedings
ISSN（印刷版）	1541-7026

Other

Other	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
国/地域	United States
City	Phoenix, AZ
Period	08/4/27 → 08/5/1

ASJC Scopus subject areas

工学（全般）

文献へのアクセス

10.1109/RELPHY.2008.4558953

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引用スタイル

Ishida, T., Tega, N., Mori, Y., Miki, H., Mine, T., Kume, H., Torii, K., Muraguchi, M., Takada, Y., Shiraishi, K., & Yamada, R. (2008). A new insight into the dynamic fluctuation mechanism of stress-induced leakage current. In 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS (pp. 604-609). [4558953] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2008.4558953

Ishida, T, Tega, N, Mori, Y, Miki, H, Mine, T, Kume, H, Torii, K, Muraguchi, M, Takada, Y, Shiraishi, K & Yamada, R 2008, A new insight into the dynamic fluctuation mechanism of stress-induced leakage current. in 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS., 4558953, IEEE International Reliability Physics Symposium Proceedings, pp. 604-609, 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS, Phoenix, AZ, United States, 08/4/27. https://doi.org/10.1109/RELPHY.2008.4558953

Ishida T, Tega N, Mori Y, Miki H, Mine T, Kume H その他. A new insight into the dynamic fluctuation mechanism of stress-induced leakage current. In 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS. 2008. p. 604-609. 4558953. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2008.4558953

@inproceedings{9e4ff506079e46af8e14b357d0449772,

title = "A new insight into the dynamic fluctuation mechanism of stress-induced leakage current",

abstract = "The dynamic fluctuation of stress-induced leakage current, called V-SILC, which is one of the causes of erratic bits in flash memory, was investigated. The effect of V-SILC on flash memory retention increases with the scaling down of device dimensions because the amplitude of V-SILC is constant and does not depend on the gate area. A statistical analysis of V-SILC indicated that V-SILC is random telegraph noise (RTN) of gate SILC and is associated with the state transition of a single defect in a gate oxide. The state transition of the defect is caused by an electron collision with the defect.",

keywords = "Dynamic fluctuation, RTN, Random telegraph noise, SILC, Stress-induced leakage current",

author = "T. Ishida and N. Tega and Y. Mori and H. Miki and T. Mine and H. Kume and K. Torii and M. Muraguchi and Y. Takada and K. Shiraishi and R. Yamada",

year = "2008",

doi = "10.1109/RELPHY.2008.4558953",

language = "English",

isbn = "9781424420506",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "604--609",

booktitle = "46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS",

note = "46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS ; Conference date: 27-04-2008 Through 01-05-2008",

}

TY - GEN

T1 - A new insight into the dynamic fluctuation mechanism of stress-induced leakage current

AU - Ishida, T.

AU - Tega, N.

AU - Mori, Y.

AU - Miki, H.

AU - Mine, T.

AU - Kume, H.

AU - Torii, K.

AU - Muraguchi, M.

AU - Takada, Y.

AU - Shiraishi, K.

AU - Yamada, R.

PY - 2008

Y1 - 2008

N2 - The dynamic fluctuation of stress-induced leakage current, called V-SILC, which is one of the causes of erratic bits in flash memory, was investigated. The effect of V-SILC on flash memory retention increases with the scaling down of device dimensions because the amplitude of V-SILC is constant and does not depend on the gate area. A statistical analysis of V-SILC indicated that V-SILC is random telegraph noise (RTN) of gate SILC and is associated with the state transition of a single defect in a gate oxide. The state transition of the defect is caused by an electron collision with the defect.

AB - The dynamic fluctuation of stress-induced leakage current, called V-SILC, which is one of the causes of erratic bits in flash memory, was investigated. The effect of V-SILC on flash memory retention increases with the scaling down of device dimensions because the amplitude of V-SILC is constant and does not depend on the gate area. A statistical analysis of V-SILC indicated that V-SILC is random telegraph noise (RTN) of gate SILC and is associated with the state transition of a single defect in a gate oxide. The state transition of the defect is caused by an electron collision with the defect.

KW - Dynamic fluctuation

KW - RTN

KW - Random telegraph noise

KW - SILC

KW - Stress-induced leakage current

UR - http://www.scopus.com/inward/record.url?scp=51549094797&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51549094797&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.2008.4558953

DO - 10.1109/RELPHY.2008.4558953

M3 - Conference contribution

AN - SCOPUS:51549094797

SN - 9781424420506

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 604

EP - 609

BT - 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS

T2 - 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS

Y2 - 27 April 2008 through 1 May 2008

ER -

A new insight into the dynamic fluctuation mechanism of stress-induced leakage current

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