A new fabrication technology of FinFETs using a neutral beam etching

Kazuhikp Endo, Shuichi Noda, Takuya Ozaki, Seiji Samukawa, Meishoku Masahata, Yongxun Liu, Kenichi Ishii, Hidenori Takashima, Etsuro Sugimata, Takashi Matsukawa, Yuki Yamauchi, Yuki Ishikawa, Eiichi Suzuki

研究成果: Conference contribution

抄録

Rectangular Si-Fin channel and Si-FinFETs were successfully fabricated to take advantage of the low-energy and damage-free characteristic of the newly proposed neutral beam etching system.

本文言語English
ホスト出版物のタイトルDigest of Papers - Microprocesses and Nanotechnology 2005
ホスト出版物のサブタイトル2005 International Microprocesses and Nanotechnology Conference
ページ228-229
ページ数2
出版ステータスPublished - 2005
イベント2005 International Microprocesses and Nanotechnology Conference - Tokyo, Japan
継続期間: 2005 10 252005 10 28

出版物シリーズ

名前Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference
2005

Other

Other2005 International Microprocesses and Nanotechnology Conference
CountryJapan
CityTokyo
Period05/10/2505/10/28

ASJC Scopus subject areas

  • Engineering(all)

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