A new approach to ZnCdSe quantum dots

B. P. Zhang, T. Yasuda, W. X. Wang, Y. Segawa, K. Edamatsu, T. Itoh, H. Yaguchi, K. Onabe

研究成果: Article査読

11 被引用数 (Scopus)

抄録

We propose a new approach of fabricating ZnCdSe quantum dots (QDs) on ZnSe and GaAs (110) surfaces by simply depositing a ZnSe/ZnCdSe/ZnSe heterostructure. The growth conditions are selected to introduce surface roughness on the over grown ZnSe which allows the formation of ZnCdSe QDs. Optical studies unambiguously demonstrate the formation of QDs. Resolution-limited sharp emission lines are observed by micro-photoluminescences and the linewidths are much less than the thermal energy. As time goes on, intermittent behaviors of the QD emissions are observed. A proper selection of growth conditions is essential in obtaining ZnCdSe QDs by this method, especially on GaAs (110) surfaces.

本文言語English
ページ(範囲)127-131
ページ数5
ジャーナルMaterials Science and Engineering B
51
1-3
DOI
出版ステータスPublished - 1998 2月 27

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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