A new approach to ZnCdSe quantum dots

B. P. Zhang; T. Yasuda; W. X. Wang; Y. Segawa; K. Edamatsu; T. Itoh; H. Yaguchi; K. Onabe

doi:10.1016/S0921-5107(97)00245-6

A new approach to ZnCdSe quantum dots

B. P. Zhang, T. Yasuda, W. X. Wang, Y. Segawa, K. Edamatsu, T. Itoh, H. Yaguchi, K. Onabe

電気通信研究所・ブロードバンド工学研究部門

研究成果: Article › 査読

11 被引用数 (Scopus)

抄録

We propose a new approach of fabricating ZnCdSe quantum dots (QDs) on ZnSe and GaAs (110) surfaces by simply depositing a ZnSe/ZnCdSe/ZnSe heterostructure. The growth conditions are selected to introduce surface roughness on the over grown ZnSe which allows the formation of ZnCdSe QDs. Optical studies unambiguously demonstrate the formation of QDs. Resolution-limited sharp emission lines are observed by micro-photoluminescences and the linewidths are much less than the thermal energy. As time goes on, intermittent behaviors of the QD emissions are observed. A proper selection of growth conditions is essential in obtaining ZnCdSe QDs by this method, especially on GaAs (110) surfaces.

本文言語	English
ページ（範囲）	127-131
ページ数	5
ジャーナル	Materials Science and Engineering B
巻	51
号	1-3
DOI	https://doi.org/10.1016/S0921-5107(97)00245-6
出版ステータス	Published - 1998 2月 27

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

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10.1016/S0921-5107(97)00245-6

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title = "A new approach to ZnCdSe quantum dots",

abstract = "We propose a new approach of fabricating ZnCdSe quantum dots (QDs) on ZnSe and GaAs (110) surfaces by simply depositing a ZnSe/ZnCdSe/ZnSe heterostructure. The growth conditions are selected to introduce surface roughness on the over grown ZnSe which allows the formation of ZnCdSe QDs. Optical studies unambiguously demonstrate the formation of QDs. Resolution-limited sharp emission lines are observed by micro-photoluminescences and the linewidths are much less than the thermal energy. As time goes on, intermittent behaviors of the QD emissions are observed. A proper selection of growth conditions is essential in obtaining ZnCdSe QDs by this method, especially on GaAs (110) surfaces.",

keywords = "Micro-photoluminescence, Quantum dot, ZnCdSe",

author = "Zhang, {B. P.} and T. Yasuda and Wang, {W. X.} and Y. Segawa and K. Edamatsu and T. Itoh and H. Yaguchi and K. Onabe",

note = "Funding Information: One of the authors, Zhang, was supported by the Special Postdoctoral Research Program of RIKEN. This work was supported in part by The Ministry of Education, Science, Sports and Culture of Japan through a Grant-in-Aid for Encouragement of Young Scientists (No. 08750028).",

year = "1998",

month = feb,

day = "27",

doi = "10.1016/S0921-5107(97)00245-6",

language = "English",

volume = "51",

pages = "127--131",

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TY - JOUR

T1 - A new approach to ZnCdSe quantum dots

AU - Zhang, B. P.

AU - Yasuda, T.

AU - Wang, W. X.

AU - Segawa, Y.

AU - Edamatsu, K.

AU - Itoh, T.

AU - Yaguchi, H.

AU - Onabe, K.

N1 - Funding Information: One of the authors, Zhang, was supported by the Special Postdoctoral Research Program of RIKEN. This work was supported in part by The Ministry of Education, Science, Sports and Culture of Japan through a Grant-in-Aid for Encouragement of Young Scientists (No. 08750028).

PY - 1998/2/27

Y1 - 1998/2/27

N2 - We propose a new approach of fabricating ZnCdSe quantum dots (QDs) on ZnSe and GaAs (110) surfaces by simply depositing a ZnSe/ZnCdSe/ZnSe heterostructure. The growth conditions are selected to introduce surface roughness on the over grown ZnSe which allows the formation of ZnCdSe QDs. Optical studies unambiguously demonstrate the formation of QDs. Resolution-limited sharp emission lines are observed by micro-photoluminescences and the linewidths are much less than the thermal energy. As time goes on, intermittent behaviors of the QD emissions are observed. A proper selection of growth conditions is essential in obtaining ZnCdSe QDs by this method, especially on GaAs (110) surfaces.

AB - We propose a new approach of fabricating ZnCdSe quantum dots (QDs) on ZnSe and GaAs (110) surfaces by simply depositing a ZnSe/ZnCdSe/ZnSe heterostructure. The growth conditions are selected to introduce surface roughness on the over grown ZnSe which allows the formation of ZnCdSe QDs. Optical studies unambiguously demonstrate the formation of QDs. Resolution-limited sharp emission lines are observed by micro-photoluminescences and the linewidths are much less than the thermal energy. As time goes on, intermittent behaviors of the QD emissions are observed. A proper selection of growth conditions is essential in obtaining ZnCdSe QDs by this method, especially on GaAs (110) surfaces.

KW - Micro-photoluminescence

KW - Quantum dot

KW - ZnCdSe

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U2 - 10.1016/S0921-5107(97)00245-6

DO - 10.1016/S0921-5107(97)00245-6

M3 - Article

AN - SCOPUS:0031997271

VL - 51

SP - 127

EP - 131

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -

A new approach to ZnCdSe quantum dots

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