A new approach to realize high performance RF power FETs on Si(110) surface

Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi

研究成果: Conference contribution

抄録

Silicon-on-insulator (SOI) LDMOS has been considered the promising technology for radio-frequency (RF) power FETs because of its merits of high power efficiency, low standby power, outclassing RF characteristics using high resistivity base substrate and so on [1-2]. However, it is very important to improve the current drivability and suppress the flicker noise in the MOSFETs to realize the high performance RF power devices [3]. It has been reported that the hole mobility on Si(110) surface is much larger than that on Si(100) [4] and indicates the possibility for improving the CMOS performance. This experimental study reports the new approach to realize a very high performance RF power FETs on Si(110) surfaces using accumulation-mode (AM) SOI device structure with very large current drivability and very low noise level. We demonstrate that this high-speed and low-noise novel balanced CMOS device obviously improves the inverter, ring oscillator circuit performance.

本文言語English
ホスト出版物のタイトルPESC '08 - 39th IEEE Annual Power Electronics Specialists Conference - Proceedings
ページ3854-3856
ページ数3
DOI
出版ステータスPublished - 2008 9 29
イベントPESC '08 - 39th IEEE Annual Power Electronics Specialists Conference - Rhodes, Greece
継続期間: 2008 6 152008 6 19

出版物シリーズ

名前PESC Record - IEEE Annual Power Electronics Specialists Conference
ISSN(印刷版)0275-9306

Other

OtherPESC '08 - 39th IEEE Annual Power Electronics Specialists Conference
国/地域Greece
CityRhodes
Period08/6/1508/6/19

ASJC Scopus subject areas

  • モデリングとシミュレーション
  • 凝縮系物理学
  • エネルギー工学および電力技術
  • 電子工学および電気工学

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