TY - JOUR
T1 - A new AlGaAs/GaAs heterojunction fet with insulated gate structure (MISSFET)
AU - Hotta, Takashi
AU - Sakaki, Hiroyuki
AU - Ohno, Hideo
PY - 1982/2
Y1 - 1982/2
N2 - We have proposed and successfully fabricated a new type of field-effect transistor (FET) with an M-I-S-S structure, which consists of a metal gate, an Al2O3 insulator and a semiconductor-semiconductor (N-AlGaAs/GaAs) heterojunction, grown by molecular beam epitaxy. This device exhibited the following advantages. High effective mobility of electrons (µeff being 27,000 cm2/V·s at 77 K) and, the capability of sustaining a high gate voltage of up to 2 V in the forward direction. These features permit the use of MISSFETs in a variety of logic circuits with a larger logic swing and higher speed than those of MESFETs.
AB - We have proposed and successfully fabricated a new type of field-effect transistor (FET) with an M-I-S-S structure, which consists of a metal gate, an Al2O3 insulator and a semiconductor-semiconductor (N-AlGaAs/GaAs) heterojunction, grown by molecular beam epitaxy. This device exhibited the following advantages. High effective mobility of electrons (µeff being 27,000 cm2/V·s at 77 K) and, the capability of sustaining a high gate voltage of up to 2 V in the forward direction. These features permit the use of MISSFETs in a variety of logic circuits with a larger logic swing and higher speed than those of MESFETs.
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U2 - 10.1143/JJAP.21.L122
DO - 10.1143/JJAP.21.L122
M3 - Article
AN - SCOPUS:0020088194
SN - 0021-4922
VL - 21
SP - L122-L124
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 2 A
ER -