A NAND structured cell with a new programming technology for highly reliable 5V-only flash EEPROM

R. Kirisawa, S. Aritome, R. Nakayama, T. Endoh, R. Shirota, F. Masuoka

研究成果: Conference article査読

29 被引用数 (Scopus)

抄録

A programming technology is proposed to improve the endurance and read retention characteristics of NAND-structured EEPROM cells programmed by Fowler-Nordheim tunneling of electrons. Erasing and writing are accomplished uniformly over the whole channel area instead of nonuniform erasing at the drain. To achieve programming over the whole channel area, a new device structure is also proposed. The high-voltage pulses can be easily generated on a chip from a single 5-V power supply because the direct current due to the avalanche breakdown does not flow. The gate length of the memory transistor is 1.0 μm. Using 1.0 μm rules, the cell size per bit is 11.7 μm 2.

本文言語English
論文番号5727502
ページ(範囲)129-130
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
DOI
出版ステータスPublished - 1990 12 1
外部発表はい
イベント1990 Symposium on VLSI Technology - Honolulu, HI, United States
継続期間: 1990 6 41990 6 7

ASJC Scopus subject areas

  • 電子工学および電気工学

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